New 85 W and 170 W LDMOS RF power transistors for WiMAX applications

With the introduction of three new RF power transistors, Infineon has expanded its product portfolio for wireless broadband applications, such as WiMAX, in the 2.5 to 2.7 GHz band to five products. The PTFA 260851E and PTFA 260851F are 85 W transistors that feature 14 dB gain (typical) and 22 % efficiency (typical) at 16 W average output power and WiMAX signal conditions. The PTFA 261702E is a 170W FET that features, 15 dB gain (typ.) and 20 % efficiency at 32 W average output power under WiMAX signal conditions. The PTFA 261702E offers the highest peak output power in the 2.5 to 2.7 GHz band. The transistor’s architecture provides electrically isolated halves that, ease use in doherty applications. The device can be used in push-pull configuration for extended bandwidth performance. Both products are available in lead-free, RoHScompliant ceramic packages. These devices are in production and both samples and test circuits are available.
Key features
- 2.5 to 2.7 GHz operating frequency range
- Highest peak power FET for WiMAX applications (PTFA 281702E)
- Higher gain with flatter response across frequency band than competition
- Typical WiMAX performance @ 2.680 MHz, 28 V:
PTFA 260851E / F
- Avg. output = 16W
- Gain = 14 dB
- Efficiency = 22%
PTFA261702E
- Avg. output power = 32W
- Gain = 15 dB
- Efficiency = 20% - Capable of handling 10:1 VSWR @ 28 V at CW output power
- PTFA 260851E and PTFA 260851F are available in eared or earless ceramic packages respectively
- PTFA 261702E is available in an eared ceramic package
- Pb-free / RoHS-compliant
Applications
- WiMAX RF power amplifiers
- WiBro RF power amplifiers
Infineon’s broad portfolio of LDMOS FETs for the 2.4 to 2.7 G Hz frequency band

Order numbers
PTFA 260851E V1
PTFA 260851F V1
PTFA 261702E V1

